View STP10N105K5_8842587.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

october 2014 docid026932 rev 2 1 / 18 this is information on a product in full production. www.st.com stf10n105k5, STP10N105K5, stw10n105k5 n - channel 1050 v, 1 ? typ., 6 a mdmesh? k5 power mosfets in to - 220, to - 220fp and to - 247 packages datasheet - production data figure 1 : internal schematic diagram features order codes v ds r ds(on) max. i d p tot stf10n105k5 1050 v 1.3 ? 6 a 30 w STP10N105K5 130 w stw10n105k5 130 w ? industrys lowest r ds(on) ? industrys best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener - protected applications ? switching applications description these very high voltage n - channel power mosfets are designed using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on - resistance an d ultra - low gate charge for applications requiring superior power density and high efficiency. table 1: device summary order codes marking package packaging stf10n105k5 10n105k5 to - 220fp tube STP10N105K5 10n105k5 to - 220 tube stw10n105k5 10n105k5 to - 247 tube d(2, t ab) g(1) s(3) am01476v1 1 2 3 tab to-220 1 2 3 to-220fp 1 2 3 t o-247
contents stf10n105k5, STP10N105K5, stw10n105k5 2 / 18 docid026932 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package mechanical data ................................ ............................. 10 4.1 to - 220 package mechanical data ................................ .................. 11 4.2 to - 247 package mechanical data ................................ .................. 13 4.3 to - 220fp package mechanical data ................................ .............. 15 5 revision history ................................ ................................ ............ 17
stf10n105k5, STP10N105K5, stw10n105k5 electrical ratings docid026932 rev 2 3 / 18 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit to - 220 to - 247 to - 220fp v gs gate - source voltage 30 v i d drain current (continuous) at t c = 25 c 6 a i d drain current (continuous) at t c = 100 c 3.78 a i dm (1) drain current (pulsed) 24 a p tot total dissipation at t c = 25 c 130 30 w i ar max. current during repetitive or single pulse avalanche 2 a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 140 mj dv/dt (2) peak diode recovery voltage slope 4.5 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heatsink (t = 1 s; t c = 25 c) 2500 v t j t stg operating junction temperature storage temperature - 55 to 150 c notes: (1) pulse width limited by safe operating area. (2) i sd 6 a, di/dt 100 a/s, v peak v (br)dss . (3) v sd 840. table 3: thermal data symbol parameter value unit to - 220 to - 247 to - 220fp r thj - case thermal resistance junction - case max. 0.96 c/w thermal resistance junction - case max. 4.2 r thj - amb thermal resistance junction - ambient max. 62.50 c/w
electrical characteristics stf10n105k5, STP10N105K5, stw10n105k5 4 / 18 docid026932 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage i d = 1 ma, v gs = 0 1050 v i dss zero gate voltage, drain current (v gs = 0) v ds = 1050 v 1 a v ds = 1050 v, t c = 125 c 50 a i gss gate - body leakage current v gs = 20 v; v ds = 0 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 3 a 1 1.3 ? table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f = 1 mhz, v gs = 0 - 545 - pf c oss output capacitance 30 pf c rss reverse transfer capacitance 1.3 pf c o(tr) (1) equivalent capacitance time related v gs = 0, v ds = 0 to 840 v 65 pf c o(er) (2) equivalent capacitance energy related 22 pf r g intrinsic gate resistance f = 1 mhz open drain 7 ? q g total gate charge v dd = 840 v, i d = 6 a v gs =10 v 21.5 nc q gs gate - source charge 3.3 nc q gd gate - drain charge 15.5 nc notes: (1) time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . (2) energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss . table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 525 v, i d = 3 a, r g = 4.7 ?, v gs = 10 v - 19 - ns t r rise time 8 ns t d(off) turn - off - delay time 50 ns t f fall time 21.5 ns
stf10n105k5, STP10N105K5, stw10n105k5 electrical characteristics docid026932 rev 2 5 / 18 table 7: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 6 a i sdm (1) source - drain current (pulsed) 24 a v sd (2) forward on voltage i sd = 6 a, v gs = 0 1.5 v t rr reverse recovery time i sd = 6 a, di/dt = 100 a/s v dd = 60 v 345 ns q rr reverse recovery charge 3.53 c i rrm reverse recovery current 20.5 a t rr reverse recovery time i sd = 6 a, di/dt = 100 a/s v dd = 60 v t j = 150 c 540 ns q rr reverse recovery charge 5.05 c i rrm reverse recovery current 18.5 a notes: (1) pulse width limited by safe operating area. (2) pulsed: pulse duration = 300 s, duty cycle 1.5%. table 8: gate - source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate - source breakdown voltage i gs = 1 ma, i d = 0 30 - - v the built - in back - to - back zener diodes have been specifically designed to enhance the esd capability of the device. the zener voltage is appropriate for efficient and cost - effective intervention to protect the device integrity. these integrated zener diodes th us eliminate the need for external components.
electrical characteristics stf10n105k5, STP10N105K5, stw10n105k5 6 / 18 docid026932 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area for to - 220 figure 3 : thermal impedance to - 220 figure 4 : safe operating area for to - 220fp figure 5 : thermal impedance to - 220fp figure 6 : safe operating area for to - 247 figure 7 : thermal impedance to - 247 i d 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 1ms 100s 0.01 tj=150c t c=25c single pulse 10ms 100 0.1 1000 gipg150920141258lm =0.5 single pulse 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -5 10 -4 10 -3 10 10 -2 10 -1 10 -2 -1 gipg150920141341lm i d 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 1ms 100s 0.01 tj=150c t c=25c single pulse 10ms 100 0.1 1000 gipg160920140929lm i d 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 1ms 100s 0.1 tj=150c t c=25c single pulse 10ms 100 0.01 1000 gipg160920141037lm =0.5 single pulse 0.05 0.02 0.01 0.1 0.2 k t p (s) 10 -4 10 -3 10 10 -1 10 -2 10 -2 -1 10 0 gipg160920141014lm =0.5 single pulse 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -5 10 -4 10 -3 10 10 -2 10 -1 10 -2 -1 gipg160920141054lm
stf10n105k5, STP10N105K5, stw10n105k5 electrical characteristics docid026932 rev 2 7 / 18 figure 8 : output characteristics figure 9 : transfer characteristics figure 10 : gate charge vs gate - source voltage figure 11 : static drain - source on - resistance figure 12 : capacitance variation figure 13 : normalized gate threshold voltage vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 gipg160920141238lm v gs(th) 0.6 0.4 0.2 0 -50 0 t j (c) (norm) - 1.2 100 50 100 i d =100 a 0.8 1 150 gipg160920141251lm v gs 6 4 2 0 0 10 q g (nc) (v) 8 15 10 v dd = 840 v i d = 6 a 12 100 0 200 500 5 v ds (v) 300 600 400 20 700 800 gipg16092014 1 152lm r ds(on) 1.10 1.00 0.90 0 4 i d (a) ( ) 2 6 1.20 v gs =10v 8 10 1.30 1.40 1.50 14 12 1.60 0.80 gipg1609201412 1 1lm i d 4 0 0 5 v ds (v) 10 (a) 15 6v v gs =9,10, 1 1v 6 12 20 7v 8v 2 8 10 14 gipg16092014 1 123lm i d 10 0 5 7 v gs (v) 9 (a) 6 8 10 2 v ds =20v 4 6 8 12 14 gipg16092014 1 136lm
electrical characteristics stf10n105k5, STP10N105K5, stw10n105k5 8 / 18 docid026932 rev 2 figure 14 : normalized on - resistance vs temperature figure 15 : source - drain diode forward characteristics figure 16 : normalized vbr(dss) vs temperature figure 17 : maximum avalanche energy vs starting tj e as 0 40 t j (c) (mj) 20 100 60 80 0 20 40 60 80 120 140 100 140 120 gipg160920141328lm v (br)dss -50 0 t j (c) (norm) 50 100 0.85 0.90 0.95 1 i d =1m a 1.05 1.1 -100 150 gipg160920141321lm v sd 1 3 i sd (a) (v) 2 6 4 5 0.5 0.6 0.7 t j =-50c t j =150c t j =25c 0.8 1 0.9 gipg160920141313lm 0 r ds(on) 0.5 -50 0 t j (c) (norm) 100 50 -100 1 1.5 2 v gs =10v id= 6 a 2.5 150 gipg160920141301lm
stf10n105k5, STP10N105K5, stw10n105k5 test circuits docid026932 rev 2 9 / 18 3 test circuits figure 18 : switching times test circuit for resistive load figure 19 : gate charge test circuit figure 20 : test circuit for inductive load switching and diode recovery times figure 21 : unclamped inductive load test circuit figure 22 : unclamped inductive waveform figure 23 : switching time waveform
package mechanical data stf10n105k5, STP10N105K5, stw10n105k5 10 / 18 docid026932 rev 2 4 package mechanical data in order to meet environmenta l requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
stf10n105k5, STP10N105K5, stw10n105k5 package mechanical data docid026932 rev 2 11 / 18 4.1 to - 220 package mechanical data figure 24 : to - 220 type a drawings 0015988_typea_rev_ t
package mechanical data stf10n105k5, STP10N105K5, stw10n105k5 12 / 18 docid026932 rev 2 table 9: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
stf10n105k5, STP10N105K5, stw10n105k5 package mechanical data docid026932 rev 2 13 / 18 4.2 to - 247 package mechanical data figure 25 : to - 247 drawings
package mechanical data stf10n105k5, STP10N105K5, stw10n105k5 14 / 18 docid026932 rev 2 table 10: to - 247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
stf10n105k5, STP10N105K5, stw10n105k5 package mechanical data docid026932 rev 2 15 / 18 4.3 to - 220fp package mechanical data figure 26 : to - 220fp drawings 7012510_rev_k_b
package mechanical data stf10n105k5, STP10N105K5, stw10n105k5 16 / 18 docid026932 rev 2 table 11: to - 220fp mechanical data dim. mm min. typ. max. a 4.4 4.6 b 2.5 2.7 d 2.5 2.75 e 0.45 0.7 f 0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 ? 3 3.2
stf10n105k5, STP10N105K5, stw10n105k5 revision history docid026932 rev 2 17 / 18 5 revision history table 12: document revision history date revision changes 07 - oct - 2014 1 first release. 14 - oct - 2014 2 document status promoted from preliminary to production data.
stf10n105k5, STP10N105K5, stw10n105k5 18 / 18 docid026932 rev 2 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics C all rights reserved

▲Up To Search▲

Price & Availability of STP10N105K5

	To Download STP10N105K5 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .